Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces.
Identifieur interne : 000054 ( Main/Exploration ); précédent : 000053; suivant : 000055Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces.
Auteurs : RBID : pubmed:24750024Abstract
The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.
DOI: 10.1021/am500752u
PubMed: 24750024
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces.</title><author><name sortKey="Dong, Hong" uniqKey="Dong H">Hong Dong</name><affiliation wicri:level="1"><nlm:affiliation>Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.</nlm:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080</wicri:regionArea></affiliation></author><author><name sortKey="Cabrera, Wilfredo" uniqKey="Cabrera W">Wilfredo Cabrera</name></author><author><name sortKey="Qin, Xiaoye" uniqKey="Qin X">Xiaoye Qin</name></author><author><name sortKey="Brennan, Barry" uniqKey="Brennan B">Barry Brennan</name></author><author><name sortKey="Zhernokletov, Dmitry" uniqKey="Zhernokletov D">Dmitry Zhernokletov</name></author><author><name sortKey="Hinkle, Christopher L" uniqKey="Hinkle C">Christopher L Hinkle</name></author><author><name sortKey="Kim, Jiyoung" uniqKey="Kim J">Jiyoung Kim</name></author><author><name sortKey="Chabal, Yves J" uniqKey="Chabal Y">Yves J Chabal</name></author><author><name sortKey="Wallace, Robert M" uniqKey="Wallace R">Robert M Wallace</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1021/am500752u</idno><idno type="RBID">pubmed:24750024</idno><idno type="pmid">24750024</idno><idno type="wicri:Area/Main/Corpus">000048</idno><idno type="wicri:Area/Main/Curation">000048</idno><idno type="wicri:Area/Main/Exploration">000054</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.</div></front></TEI><pubmed><MedlineCitation Status="Publisher" Owner="NLM"><PMID Version="1">24750024</PMID><DateCreated><Year>2014</Year><Month>5</Month><Day>2</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><PubDate><Year>2014</Year><Month>Apr</Month><Day>30</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces.</ArticleTitle><Pagination><MedlinePgn></MedlinePgn></Pagination><Abstract><AbstractText NlmCategory="UNLABELLED">The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.</AbstractText></Abstract><AuthorList><Author><LastName>Dong</LastName><ForeName>Hong</ForeName><Initials>H</Initials><Affiliation>Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.</Affiliation></Author><Author><LastName>Cabrera</LastName><ForeName>Wilfredo</ForeName><Initials>W</Initials></Author><Author><LastName>Qin</LastName><ForeName>Xiaoye</ForeName><Initials>X</Initials></Author><Author><LastName>Brennan</LastName><ForeName>Barry</ForeName><Initials>B</Initials></Author><Author><LastName>Zhernokletov</LastName><ForeName>Dmitry</ForeName><Initials>D</Initials></Author><Author><LastName>Hinkle</LastName><ForeName>Christopher L</ForeName><Initials>CL</Initials></Author><Author><LastName>Kim</LastName><ForeName>Jiyoung</ForeName><Initials>J</Initials></Author><Author><LastName>Chabal</LastName><ForeName>Yves J</ForeName><Initials>YJ</Initials></Author><Author><LastName>Wallace</LastName><ForeName>Robert M</ForeName><Initials>RM</Initials></Author></AuthorList><Language>ENG</Language><PublicationTypeList><PublicationType>JOURNAL ARTICLE</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>4</Month><Day>30</Day></ArticleDate></Article><MedlineJournalInfo><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>4</Month><Day>23</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>4</Month><Day>23</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>4</Month><Day>23</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>aheadofprint</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am500752u</ArticleId><ArticleId IdType="pubmed">24750024</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV2/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000054 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000054 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV2
|flux= Main
|étape= Exploration
|type= RBID
|clé= pubmed:24750024
|texte= Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces.
}}
Pour générer des pages wiki
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i -Sk "pubmed:24750024" \
| HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd \
| NlmPubMed2Wicri -a IndiumV2
| This area was generated with Dilib version V0.5.76. |  |